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BF820 Datasheet Preview

BF820 Datasheet

NPN High-Voltage Transistors

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NPN High-Voltage Transistors
FEATURES
Low current(max.50mA).
High voltage(max.300V).
Complements:BF821,BF823.
Pb
Lead-free
APPLICATIONS
Telephony and professional communication equipment.
Production specification
BF820/BF822
ORDERING INFORMATION
Type No.
Marking
BF820
BF822
1V
1X
SOT-23
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
BF820
BF822
BF820
BF822
300
250
300
250
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
50
IB Base Collector-Peak
100
Ptot Total Power Dissipation
250
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Unit
V
V
V
mA
mA
mW
C107
Rev.A
www.gmesemi.com
1




GME

BF820 Datasheet Preview

BF820 Datasheet

NPN High-Voltage Transistors

No Preview Available !

Production specification
NPN High-Voltage Transistors
BF820/BF822
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO
IC=100μA IE=0 BF820 300
BF822 250
V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC=1mA IB=0
BF820 300
BF822 250
IE=100μA IC=0
5
V
V
Collector cut-off current
ICBO VCB=200V IE=0
20 nA
Emitter cut-off current
IEBO VEB=5V IC=0
50 nA
DC current gain
hFE VCE=20V IC=25mA 50
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
IC=30mA IB=5mA
VCE=10V,IC=10mA
f=100MHz
0.6 V
60 MHz
Feedback capacitance
Cre VCB=30V IC=0 f=100MHz 1.6 pF
C107
Rev.A
www.gmesemi.com
2


Part Number BF820
Description NPN High-Voltage Transistors
Maker GME
Total Page 3 Pages
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