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BL9N20 - N-Channel Power Mosfet

Features

  • TrenchFET Power.

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Full PDF Text Transcription

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Production specification N-Channel Enhancement Mode Field Effect Transistor BL9N20 FEATURES  TrenchFET Power MOSFETS.  175℃ Junction Temperature.  New Low Thermal Resistance Package. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value VDS Drain-Source Voltage 200 VGS Gate -Source Voltage ±20 ID Continuous Drain Current(TJ=175℃) TC=25℃ TC=125℃ 9 5.2 IDM Pulsed Drain Current IAR Avalanche Current 10 7 PD Power Dissipation at TC=25℃ TA=25℃(Note1) EAS RthJA Single Pulse Avalanche Energy L = 0.1 Mh(Note2) Junction-to-Ambient (PCB Mount)c RthJC Junction-to-Case (Drain) Tj Tstg Operating Junction and StorageTem-perature Range Note:1.When mounted on 1“ square PCB(FR-4 material) 2.Duty cycle≤1%.
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