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BSR42 Datasheet Preview

BSR42 Datasheet

NPN medium power Transistors

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Production specification
NPN medium power Transistors
BSR40/BSR41/BSR42/BSR43
FEATURES
High current(max.1A).
Low voltage(max.80V).
Thick and thin-film circuits.
Pb
Lead-free
Telephony and general industrial applications.
NPN complements:BSR30,BSR31 and BSR33.
ORDERING INFORMATION
Type No.
Marking
BSR40
BSR41
BSR42
BSR43
AR1
AR2
AR3
AR4
SOT-89
Package Code
SOT-89
SOT-89
SOT-89
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
BSR40 BSR41 70
BSR42 BSR43 90
VCEO
Collector-Emitter Voltage
BSR40 BSR41 60
BRS42 BSR43 80
VEBO
Emitter-Base Voltage
5
IC DC Collector Current
1
ICM Peak Collector Current
2
IBM Peak base current
Ptot Total power dissipation,TS=130
0.2
1.35
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Unit
V
V
V
A
A
A
W
E072
Rev.A
www.gmesemi.com
1




GME

BSR42 Datasheet Preview

BSR42 Datasheet

NPN medium power Transistors

No Preview Available !

Production specification
NPN medium power Transistors
BSR40/BSR41/BSR42/BSR43
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector cut-off current ICBO
Emitter-base cut-off
current
IEBO
DC current gain
hFE
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Collector capacitance
VCE(sat)
VBE(sat)
Cc
Emitter capacitance
Ce
Transition frequency
fT
VCB=60V IE=0
VCB=60V IE=0,TA=150
100 nA
50 μA
VCE=5V IC=0A
VCE=5V IC=100uA
VCE=5V IC=100mA
VCE=5V IC=500mA
IC=150mA IB=15mA
IC=500mA IB=50mA
IC=150mA IB=15mA
IC=500mA IB=50mA
IE=ie=0A,VCB=10V
f=1MHz
IC=ic=0A,VEB=0.5V
f=1MHz
VCE=10V, IC=50mA,
f=100MHz
BSR40;BSR42
BSR41;BSR43
BSR40;BSR42
BSR41;BSR43
BSR40;BSR42
BSR41;BSR43
100
10
30
40 120
100 300
30
50
0.25
0.5
1
1.2
12
nA
V
V
pF
90 pF
100 MHz
Turn-on time
Turn-off time
ton
ICon=100mA;IBon=5mA;IBoff=-5mA
ton
250 ns
1 us
E072
Rev.A
www.gmesemi.com
2


Part Number BSR42
Description NPN medium power Transistors
Maker GME
Total Page 3 Pages
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