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GME

BSS138 Datasheet Preview

BSS138 Datasheet

N-Channel Power Mosfet

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BSS138 pdf
Production specification
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138
FEATURES
Low On-Resisrance.
Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
Pb
Lead-free
ORDERING INFORMATION
Type No.
Marking
BSS138
K38
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
50
Units
V
VDGR
Drain-Gate voltage RGS20KΩ
50
V
VGSS
Gate-Surce Voltage
±20 V
ID Drain current
-continuous
200
mA
PD
RθJA
Power Dissipation
300
Thermal Resistance,Junction-to-Ambient 417
mW
/W
TJ, Tstg
Junction and Storage Temperature
-55 to +150
C184
Rev.A
www.gmesemi.com
1



GME
GME

BSS138 Datasheet Preview

BSS138 Datasheet

N-Channel Power Mosfet

No Preview Available !

BSS138 pdf
Production specification
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Gate leakage current
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-On Delay Time
Turn-Off Delay Time
Symbol
IGSS
V(BR)DSS
VGS(th)
IDSS
RDS(on)
gFS
CISS
COSS
CRSS
tD(ON)
tD(OFF)
Test conditions
VGS=±20V,VDS=0V
VGS=0V,ID=250uA
VDS= VGS, ID=250uA
VDS=50V, VGS=0V
ID=0.22A,VGS=10V
VDS=25V,ID=0.2A,f=1MHz
VDS=10V,VGS=0V,f=1.0MHz
VDD = 30V, ID= 0.2A,
RGEN=50
MIN TYP
50 75
0.5 1.2
1.4
100
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
MAX
±1
1.6
0.5
3.5
50
25
8
20
20
UNIT
uA
V
V
μA
Ω
mS
pF
ns
ns
C184
Rev.A
www.gmesemi.com
2


Part Number BSS138
Description N-Channel Power Mosfet
Maker GME
Total Page 3 Pages
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BSS138 pdf
BSS138 Datasheet PDF
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