Datasheet4U Logo Datasheet4U.com

BSS8402DW - MOSFET

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Complementary Pair. Pb Lead-free SOT-363.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS8402DW MOSFET H&M semi
BSS8402DW MOSFET Diodes Incorporated
BSS8402D POWER MOSFET RUILON
BSS84 P-Channel MOSFET JCET
BSS84 P-channel transistor NXP

Other Datasheets by Galaxy Microelectronics

Part Number Description
BSS84 P-Channel Vertical D-MOS Transistor
BSS84W P-Channel Power Mosfet

Full PDF Text Transcription

Click to expand full text
Production specification Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW FEATURES  Low On-Resistance.  Low Gate Threshold Voltage.  Low Input Capacitance.  Fast Switching Speed.  Low Input/Output Leakage.  Complementary Pair. Pb Lead-free SOT-363 ORDERING INFORMATION Type No. Marking BSS8402DW KNP Package Code SOT-363 MAXIMUM RATING – Total Device @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units PD Power Dissipation 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Maximum Ratings N-CHANNEL –Q1, 2N7002 Section @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 60 VDGR VGSS ID Drain-Gate voltage(RGS≤1.
Published: |