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GME

FMMT591 Datasheet Preview

FMMT591 Datasheet

PNP Silicon Epitaxial Planar Transistor

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PNP Silicon Epitaxial Planar Transistor
FEATURES
z High saturation voltage.
z Complementary To FMMT491.
z Excellent HFE Linearity.
Pb
Lead-free
APPLICATIONS
z Switching appilication.
Production specification
FMMT591
ORDERING INFORMATION
Type No.
Marking
FMMT591
591
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-80
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-1000
PC Collector Dissipation
500
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
C053
Rev.A
www.gmicroelec.com
1




GME

FMMT591 Datasheet Preview

FMMT591 Datasheet

PNP Silicon Epitaxial Planar Transistor

No Preview Available !

Production specification
PNP Silicon Epitaxial Planar Transistor
FMMT591
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-80
V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
IEBO
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
VBE(sat)
VBE
fT
VCB=-60V,IE=0
VEB=-4V,IC=0
VCE=-5V,IC=-1mA
VCE=-5V,IC=-500mA
VCE=-5V,IC=-1A
VCE=-5V,IC=-2A
IC=-500mA, IB=-50mA
IC=-1A, IB= -100mA
IC=-1A, IB= -100mA
VCE=-5V,IC=-1A
VCE=-10V, IC= -50mA
f=100MHz
100
100
80
15
150
-0.1 μA
-0.1 μA
300
-0.3
V
-0.6
-1.2 V
-1 V
MHz
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
10 pF
C053
Rev.A
www.gmicroelec.com
2


Part Number FMMT591
Description PNP Silicon Epitaxial Planar Transistor
Maker GME
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FMMT591 Datasheet PDF






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