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GME

HM4033 Datasheet Preview

HM4033 Datasheet

PNP EPITAXIAL PLANAR TRANSISTOR

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PNP EPITAXIAL PLANAR TRANSISTOR
FEATURES
The HM4033 is designed for high current
general purpose amplifier applications.
Pb
Lead-free
Production specification
HM4033
ORDERING INFORMATION
Type No.
Marking
HM4033
4033
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PD
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Junction and Storage Temperature
-80
-80
-5
-1
1.2
-55 to +150
Units
V
V
V
A
W
E078
Rev.A
www.gmesemi.com
1




GME

HM4033 Datasheet Preview

HM4033 Datasheet

PNP EPITAXIAL PLANAR TRANSISTOR

No Preview Available !

Production specification
PNP EPITAXIAL PLANAR TRANSISTOR
HM4033
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
Collector output capacitance
fT
Cob
IC=-10μA,IE=0
IC=-10mA,IB=0
IE=-10μA,IC=0
VCB=-60V
VEB=-5V,IC=0
VCE=-5V,IC=-0.1mA
VCE=-5V,IC=-0.1A
VCE=-5V,IC=-0.5A
VCE=-5V,IC=-1A
IC=-150mA, IB= -15mA
IC=-500mA, IB= -50mA
IC=-150mA, IB= -15mA
IC=-500mA, IB= -50mA
VCE=-10V, IC= -50mA,
f=100MHz
VCB=-10V,IE=0,f=1MHz
-80
-80
-5
-100
-100
75
100
70
25
-0.15
-0.5
-0.9
-1.1
V
V
V
nA
nA
V
V
100 MHz
20 pF
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
E078
Rev.A
www.gmesemi.com
2


Part Number HM4033
Description PNP EPITAXIAL PLANAR TRANSISTOR
Maker GME
Total Page 3 Pages
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