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M8050 - Silicon Epitaxial Planar Transistor

Features

  • High Collector Current. (IC= 800mA).
  • Complementary To M8550. Pb Lead-free.
  • Excellent HFE Linearity.
  • High total power dissipation. (PC=200mW). M8050.

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 800mA).  Complementary To M8550. Pb Lead-free  Excellent HFE Linearity.  High total power dissipation.(PC=200mW). M8050 APPLICATIONS  High Collector Current.. ORDERING INFORMATION Type No. Marking M8050 Y11 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 25 Units V V VEBO Emitter-Base Voltage 6V IC PC Tj,Tstg Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 800 mA 200 mW -55 to +150 ℃ C152 Rev.A www.gmesemi.
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