MBRB10100CT Datasheet | Galaxy Microelectronics

Features z High Surge Capacity. z For Use In Low Voltage,High Frequency Inver- Pb Lead-free ters,Free Wheeling,And Polarity Protection Applications. z Metal Silicon Junction,Majority Carrier Conduction. z High Current Capacity,Low Forward Voltage Drop. z Guard Ring for Over Voltage Protection. TO-263 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBRB1080CT MBRB10100CT Unit VRRM Recurrent Peak Reverse Voltage 80 100 V VRMS RMS Reverse Voltage VDC IF(AV) IFSM DC Blocking Voltage Average Forward Rectified total devicce Current @TA=100℃ per leg Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load RθJC Tj Tstg Typical Thermal Resistance Junction to Case Operating Junction and Storage Tem-perature Range 56 70 80 100 10 5.0 120 -55 to +150 V V A A ℃/W ℃ X005 Rev.A .gmicroelec. 1 Production...