MBRF30200CT Datasheet | Galaxy Microelectronics

Production specification Schottky Barrier Rectifiers MBRF30150CT---MBRF30200CT Features z High surge capacity. z For use in low voltage,high frequency Pb Lead-free Inverters,free wheeling,and polarity protect- tion applications. z Metal silicon junction,majority carrier conduction. z High current capacity,lowforward voltage drop. z Guard ring for over voltage protection. ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter MBRF30150CT MBRF30200CT Unit VRRM VRMS Recurrent Peak Reverse Voltage RMS Voltage 150 200 V 105 140 V VDC IF(AV) IFSM DC Blocking Voltage Average Forward Total Device Rectified Current @TA= 100°C Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed on rated load RθJC Thermal Resistance(Note1) Tj Tstg Operating Junction and Storage Temperature Range Note:1.Thermal resistance from junction to case. 150 200 30 200 4.4 -55 to +150 V A A ℃/W ℃ S041 Rev.A .gmicroelec. 1 Production specification Schottky Barrier Rectifiers MBRF30150CT---MBRF30200CT ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test...