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GME

TIP122 Datasheet Preview

TIP122 Datasheet

NPN Epitaxial Silicon Darlington Transistor

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Medium Power Linear Switching Applications
FEATURES
Complementary to TIP127.
MSL 3
Pb
Lead-free
Production specification
TIP122
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
100 V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Crrent
Collector Dissipation
Junction and Storage Temperature
Ta=25
TC=25
100 V
5V
5
A
8
120 mA
2
65
-65 to +150
W
X023
Rev.A
www.gmesemi.com
1




GME

TIP122 Datasheet Preview

TIP122 Datasheet

NPN Epitaxial Silicon Darlington Transistor

No Preview Available !

Production specification
Medium Power Linear Switching Applications
TIP122
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-emitter Sustaining Voltage VCEO(SUS) IC=100mA,IB=0
100
V
Collector Cut-off Current
ICEO VCE=50V,IB=0
0.5 mA
Collector Cut-off Current
ICBO VCB=100V, IE=0
0.2 mA
Emitter Cut-off Current
DC Current Gain
IEBO
hFE
Collector-emitter Saturation Voltage VCE(sat)
Base-emitter on Voltage
Output Capacitance
VBE(on)
Cob
VEB=5V,IC=0
VCE=3V,IC=0.5A
VCE=3V,IC=3A
IC=3A, IB=12mA
IC=5A, IB=20mA
VCE=3V ,IC=3A
VCB=10V, IE=0,
f=0.1MHz
1000
1000
2 mA
2.0
V
4.0
2.5 V
200 pF
X023
Rev.A
www.gmesemi.com
2


Part Number TIP122
Description NPN Epitaxial Silicon Darlington Transistor
Maker GME
Total Page 4 Pages
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