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GME

TIP41C Datasheet Preview

TIP41C Datasheet

Epitaxial Planar NPN Transistor

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Epitaxial Planar NPN Transistor
FEATURES
z Complementary to TIP42C.
Pb
Lead-free
Production specification
TIP41C
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
100 V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Crrent
DC
Pulse
Collector Dissipation
Junction and Storage Temperature
Ta=25
100 V
5V
6
A
10
2A
2W
-55 to +150
X018
Rev.A
www.gmicroelec.com
1




GME

TIP41C Datasheet Preview

TIP41C Datasheet

Epitaxial Planar NPN Transistor

No Preview Available !

Production specification
Epitaxial Planar NPN Transistor
TIP41C
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
VCEO(SUS)
ICEO
ICES
IEBO
IC=30mA,IB=0
VCE=60V,IB=0
VCE=100V, VEB=0
VEB=5V,IC=0
100
DC Current Gain
hFE
Collector-emitter Saturation Voltage
Base-emitter on Voltage
Transition Frequency
VCE(sat)
VBE(on)
fT
VCE=4V,IC=0.3A
VCE=4V,IC=3A
IC=6A, IB=600mA
VCE=4V ,IC=6A
VCE=10V, IC=0.5A
30
15
3
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
V
0.7 mA
400 μA
1 mA
75
1.5 V
2.0 V
MHz
X018
Rev.A
www.gmicroelec.com
2


Part Number TIP41C
Description Epitaxial Planar NPN Transistor
Maker GME
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TIP41C Datasheet PDF






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