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GME

TIP42C Datasheet Preview

TIP42C Datasheet

Epitaxial Planar PNP Transistor

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Epitaxial Planar PNP Transistor
2FEATURES
Complementary to TIP41C.
Pb
Lead-free
Production specification
TIP42C
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-100
V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Crrent
DC
Pulse
Collector Dissipation
Junction and Storage Temperature
Ta=25
-100
V
-5 V
-6
A
-10
-2 A
2W
-55 to +150
X019
Rev.A
www.gmesemi.com
1




GME

TIP42C Datasheet Preview

TIP42C Datasheet

Epitaxial Planar PNP Transistor

No Preview Available !

Production specification
Epitaxial Planar PNP Transistor
TIP42C
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
VCEO(SUS)
ICEO
ICES
IEBO
IC=-30mA,IB=0
VCE=-60V,IB=0
VCE=-100V, VEB=0
VEB=-5V,IC=0
-100
DC Current Gain
hFE
Collector-emitter Saturation Voltage
Base-emitter on Voltage
VCE(sat)
VBE(on)
VCE=-4V,IC=-0.3A
VCE=-4V,IC=-3A
IC=-6A, IB=-600mA
VCE=-4V ,IC=-6A
30
15
Transition Frequency
fT
VCE=-10V, IC=-0.5A
3
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
-0.7
-400
-1
V
mA
μA
mA
75
-1.5 V
-2.0 V
MHz
X019
Rev.A
www.gmesemi.com
2


Part Number TIP42C
Description Epitaxial Planar PNP Transistor
Maker GME
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TIP42C Datasheet PDF





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