Download the GDSSF22A5E datasheet PDF.
This datasheet also covers the GDSSF22A5E-GOOD variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
It utilizes the latest trench processing techniques to achieve fast switching speed and short reverse recovery time.
Key Features
Low Gate Charge for Fast Switching.
Small 1.6 x 1.6 mm Footprint.
ESD Protected Gate.
Pb-Free Package is Available.
150℃ operating temperature
GDSSF22A5E
Pin Assignment
Schematic diagram.
Full PDF Text Transcription for GDSSF22A5E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
GDSSF22A5E. For precise diagrams, and layout, please refer to the original PDF.
Main Product Characteristics: VDSS 20V RDS(on) 3Ω ID 238mA Features and Benefits: Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate...
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for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available 150℃ operating temperature GDSSF22A5E Pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve fast switching speed and short reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in Power Management Load Switch, Level Shift, Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
GDSSF22A5E Datasheet
