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GDSSF2418EB - MOSFET

Download the GDSSF2418EB datasheet PDF. This datasheet also covers the GDSSF2418EB-GOOD variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF2418EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V.

This device is suitable for use as a load switch.

It is ESD protected.

Key Features

  • VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating：2500V HBM.
  • High Power and current handling capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GDSSF2418EB-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GDSSF2418EB
Manufacturer GOOD-ARK
File Size 500.73 KB
Description MOSFET
Datasheet download datasheet GDSSF2418EB Datasheet

Full PDF Text Transcription for GDSSF2418EB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GDSSF2418EB. For precise diagrams, and layout, please refer to the original PDF.

DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is su...

View more extracted text
rge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. GDSSF2418EB GENERAL FEATURES ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 21mΩ @ VGS=4.

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