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GDSSF2816EB - MOSFET

Download the GDSSF2816EB datasheet PDF. This datasheet also covers the GDSSF2816EB-GOOD variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V.

Key Features

  • VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2500V HBM.
  • High Power and current handling capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GDSSF2816EB-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GDSSF2816EB
Manufacturer GOOD-ARK
File Size 437.95 KB
Description MOSFET
Datasheet download datasheet GDSSF2816EB Datasheet

Full PDF Text Transcription for GDSSF2816EB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GDSSF2816EB. For precise diagrams, and layout, please refer to the original PDF.

DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GDSSF2816EB GENE...

View more extracted text
rge and operation with gate voltages as low as 0.75V. GDSSF2816EB GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.

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