GDSSF2816EB mosfet equivalent, mosfet.
* VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2500V HBM
* High Power and cu.
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V.
GDSSF2816EB
GENERAL FEATURES
* VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V R.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 437.95KB)