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GDSSF3611E - MOSFET

Download the GDSSF3611E datasheet PDF. This datasheet also covers the GDSSF3611E-GOOD variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GDSSF3611E-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GDSSF3611E
Manufacturer GOOD-ARK
File Size 346.51 KB
Description MOSFET
Datasheet download datasheet GDSSF3611E Datasheet

Full PDF Text Transcription for GDSSF3611E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GDSSF3611E. For precise diagrams, and layout, please refer to the original PDF.

Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load...

View more extracted text
nced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature GDSSF3611E Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

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