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SSF1020D Datasheet Preview

SSF1020D Datasheet

100V N-Channel MOSFET

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Main Product Characteristics
VDSS
RDS(on)
ID
100V
16mΩ(typ.)
60A
DPAK
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175operating temperature
Lead free product
SSF1020D
100V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
60
50
240
143
2.0
100
± 20
240
39
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
www.goodark.com
Page 1 of 7
Rev.2.2




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SSF1020D Datasheet Preview

SSF1020D Datasheet

100V N-Channel MOSFET

No Preview Available !

Thermal Resistance
Symbol
RθJC
RθJA
Characteristics
Junction-to-case
Junction-to-ambient
SSF1020D
100V N-Channel MOSFET
Typ.
1.05
Max.
62
Units
/W
/W
Electrical Characteristics @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
100
2.0
Typ.
16
3.0
2.0
90
14
24
18.2
15.6
70.5
13.8
3150
300
240
Max.
20
4.0
1
10
100
-100
Units
V
V
μA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
VDS = VGS, ID = 250μA
TJ = 125
VDS = 100V,VGS = 0V
TJ = 150°C
VGS =20V
VGS = -20V
ID = 30A,
VDS=30V,
VGS = 10V
VGS=10V, VDS=30V,
RL=15Ω,
RGEN=2.5Ω
VGS = 0V
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max.
— — 60
— — 240
— — 1.3
— 57 —
— 107 —
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=30A, VGS=0V
TJ = 25°C, IF =60A,
di/dt = 100A/μs
www.goodark.com
Page 2 of 7
Rev.2.2


Part Number SSF1020D
Description 100V N-Channel MOSFET
Maker GOOD-ARK
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SSF1020D Datasheet PDF






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