SSF2318E Description
The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operate with gate voltages as low as 2.5V. SSF2318E 20V N-Channel MOSFET.
SSF2318E Key Features
- VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V
- High Power and Current Handling Capability
- Lead Free
- Surface Mount Package
SSF2318E Applications
- Battery Protection