SSF3051G7 mosfet equivalent, p-channel mosfet.
SOT23-6
* Advanced trench MOSFET process technology
* Special designed for buttery protection, load
switching and general power management
* Ultra low on-r.
Absolute Max Rating
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use i.
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