SSF3051G7 Datasheet | Good-Ark Semiconductor

Main Product Characteristics VDSS -30V RDS(on) 45mohm(typ.) ID -4A Features and Benefits: SOT23-6 - Advanced trench MOSFET process technology - Special designed for buttery protection, load switching and general power management - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature - Lead free product 30V P-Channel MOSFET 3051G7 Marking and Pin Assignment S Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications. Absolute Max Rating Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit -30 ±25 -4 -25 1.7 -55 To 150 Unit V V A A W ℃ Thermal...