SSF3612E - N-Channel MOSFET

GOOD-ARK

Download the SSF3612E datasheet PDF. This datasheet also covers the SSF3612E-GOOD variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Key Features

VDS = 25V,ID = 11A RDS(ON) < 20mΩ @ VGS=4.0V RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V.
High Power and current handling capability.
Lead free product.
Surface Mount Package SSF3612E 25V N-Channel MOSFET Schematic Diagram Marking and Pin Assignment.

📥 Download Datasheet

SSF3612E n-channel mosfet by GOOD-ARK - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SSF3612E-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SSF3612E
Manufacturer	GOOD-ARK
File Size	453.21 KB
Description	N-Channel MOSFET
Datasheet	SSF3612E Datasheet

📁 Similar Datasheet

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Other Datasheets by GOOD-ARK

Part Number	Description
SSF3612	N-Channel MOSFET
SSF3610	30V N-Channel MOSFET
SSF3610E	N-Channel MOSFET
SSF3611E	P-Channel MOSFET
SSF3615	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. GENERAL FEATURES ● VDS = 25V,ID = 11A RDS(ON) < 20mΩ @ VGS=4.0V RDS(ON) < 17mΩ @ VGS=4.