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SSF5506 - N-Channel MOSFET

Download the SSF5506 datasheet PDF. This datasheet also covers the SSF5506-GOOD variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF5506-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF5506
Manufacturer GOOD-ARK
File Size 1.04 MB
Description N-Channel MOSFET
Datasheet download datasheet SSF5506 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics VDSS 55V RDS(on) 3.8mohm(typ.) ID 140A TO- 220 Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSF5506 55V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.