Description
Main Product Characteristics SSF6007 50V P-Channel MOSFET D VDSS -50V D RDS(on) ID 2.1Ω (Typ) -130mA .
The SSF6007 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for high efficiency switched mode power supplies
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Max. Drain-Source Voltage
VDS
-50
Gate-Source Voltage
VGS
±20
Drain Current-Continuous, VGS @ -10V (TC=25°C)1 ID
Drain Current-Continuous, VGS @ -10V (TC=100°C)1
-130 -100
Drain Current-Pulsed2
IDM
-520
P