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SSF6NS70UG - N-Channel MOSFET

Download the SSF6NS70UG datasheet PDF. This datasheet also covers the SSF6NS70UG-GOOD variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF6NS70UG series MOSFET is a new technology, which combines an innovative super junction technology and advance process.

This new technology achieves low R DS (ON), energy saving, high reliability and uniformity, superior power density and space saving.

Key Features

  • TO-251 (IPAK).
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Lead free product SSF6NS70UG 700V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF6NS70UG-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF6NS70UG
Manufacturer GOOD-ARK
File Size 1.03 MB
Description N-Channel MOSFET
Datasheet download datasheet SSF6NS70UG Datasheet

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Other Datasheets by GOOD-ARK

Part Number Description
SSF6NS70UD N-Channel MOSFET
SSF6NS70D 700V N-Channel MOSFET
SSF6NS70F 700V N-Channel MOSFET
SSF6NS70G 700V N-Channel MOSFET
SSF6N40D 400V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics VDSS 700V RDS(on) 0.95Ω (typ.) ID 6A ① Features and Benefits: TO-251 (IPAK)  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product SSF6NS70UG 700V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description: The SSF6NS70UG series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low R DS (ON), energy saving, high reliability and uniformity, superior power density and space saving.