SSF8970
Description
The SSF8970 utilizes the latest trench processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in battery protection, power switching and a wide variety of other applications.
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Units
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TC=25°C) Drain Current
- Continuous (TC=100°C) Drain Current
- Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25°C) Power Dissipation
- Derate above 25°C Storage Temperature Range Operating Junction Temperature Range
VDS VGS
ID IDM EAS IAS
PD TSTG
80 ±20 200 126 800 1280 160 208 1.66 -50 to 150 -50 to 150
V V A A A m J A W W/°C °C °C
Thermal Characteristics
Parameter Thermal Resistance Junction to ambient Thermal Resistance Junction to Case
Symbol RθJA RθJC
Max....
