TO-220
* Advanced MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low g.

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating t.

These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs.

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