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GOOD-ARK Electronics

LL4148 Datasheet Preview

LL4148 Datasheet

SILICON EPITAXIAL PLANAR DIODE

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Features
Silicon Epitaxial Planar Diode
fast switching diode in MiniMELF case especially suited for
automatic insertion.
Identical electrically to standard 1N4148
These diode are delivered taped.
Details see “Taping”.
Weight approx. : 0.05g
LL4148
SILICON EPITAXIAL PLANAR DIODE
Absolute Maximum Ratings (Ta=25 )
Reverse Voltage
Peak reverse voltage
Rectified current (Average)
Half wave rectification with Resist. Load
at Tamb=25 and f 50Hz
Surge forward current at t<1s and Tj=25
Power dissipation at Tamb=25
Junction Temperature
Storage temperature range
Note:
(1) Valid provided that electrodes are kept at ambient temperature
DIMENSIONS
inches
mm
DIM Note
Min. Max. Min. Max.
A
0.134
0.142
3.4
3.6
B
0.055
0.059
1.40
1.50
C
0.008
0.016
0.2
0.4
Symbols
VR
VRM
IO
IFSM
Ptot
T
j
TS
Values
75
100
150 1)
500
500 1)
175
-65 to +175
Units
Volts
Volts
mA
mA
mW
1




GOOD-ARK Electronics

LL4148 Datasheet Preview

LL4148 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

Characteristics at Tj=25
Forward voltage at IF=10mA
Leakage current
at
at
at
VVVRRR===227005VVV,
Tj=150
Reverse breakdown voltage
tested wiht 100uA pulses
Capacitance
at VF=VR=0
Voltage rise when switching ON
tested with 50mA forward pulses
tp=0.1uS, rise time<30nS, fp=5 to 100KHz
Reverse recovery time
from IF=10mA to IR=1mA, VR=6V, RL=100
Thermal resistance
junction to ambient Air
Rectification efficiency
at f=100MHz, VRF=2V
Note:
(1) Valid provided that electrodes are kept at ambient temperature
Symbols
VF
IIIRRR
V(BR)R
Ctot
Vfr
trr
RthA
V
Min.
-
-
-
-
100
-
-
-
-
0.45
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
1
25
5
50
-
4
2.5
4
0.35 1)
-
Units
Volt
nA
uA
uA
Volts
F
Volts
nS
K/mW
-
Rectification efficiency measurement circuit
2


Part Number LL4148
Description SILICON EPITAXIAL PLANAR DIODE
Maker GOOD-ARK Electronics
Total Page 4 Pages
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