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GOOD-ARK Electronics

LL4448 Datasheet Preview

LL4448 Datasheet

SILICON EPITAXIAL PLANAR DIODE

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Features
Silicon Epitaxial Planar Diode
fast switching diode in MiniMELF case especially suited for
automatic insertion.
Identical electrically to standard 1N4448
These diode are delivered taped.
Details see “Taping”.
Weight approx. : 0.05g
LL4448
SILICON EPITAXIAL PLANAR DIODE
Absolute Maximum Ratings (Ta=25 )
Reverse voltage
Peak reverse voltage
Rectified current (Average)
Half wave rectification with Resist. Load
at Tamb=25 and f 50Hz
Surge forward current at t<1s and Tj=25
Power dissipation at Tamb=25
Junction Temperature
Storage temperature range
Note:
(1) Valid provided that electrodes are kept at ambient temperature
DIMENSIONS
inches
mm
DIM Note
Min. Max. Min. Max.
A
0.134
0.142
3.4
3.6
B
0.055
0.059
1.40
1.50
C
0.008
0.016
0.2
0.4
Symbols
VR
VRM
IO
IFSM
Ptot
T
j
TS
Values
75
100
150 1)
500
500 1)
175
-65 to +175
Units
Volts
Volts
mA
mA
mW
1




GOOD-ARK Electronics

LL4448 Datasheet Preview

LL4448 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

Characteristics at Tj=25
Forward voltage
at
at
IIFF==150m0AmA
Leakage current
at
at
at
VVVRRR===227005VVV,
Tj=150
Reverse breakdown voltage
tested with 100uA pulses
Capacitance
at VF=VR=0
Reverse recovery time
from IF=10mA to IR=1mA, VR=6V, RL=100
Thermal resistance
junction to ambient Air
Rectification efficiency
at f=100MHz, VRF=2V
Note:
(1) Valid provided that electrodes are kept at ambient temperature
Symbols
VVFF
IIIRRR
V(BR)R
Ctot
trr
RthA
V
Min.
0.62
-
-
-
-
100
-
-
-
0.45
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
0.72
1
25
5
50
-
4
4
0.35 1)
-
Units
Volt
Volt
nA
uA
uA
Volts
F
nS
K/mW
-
Rectification efficiency measurement circuit
2


Part Number LL4448
Description SILICON EPITAXIAL PLANAR DIODE
Maker GOOD-ARK Electronics
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LL4448 Datasheet PDF






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