MBR3020CT THRU MBR30200CT
30 AMPERS SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 and 200 Volts Forward Current - 30.0 Ampere
TO-220AB
FEATURES
0.419(10.66)MAX.
0.130(3.30)
0.100(2.54)
Ø 0.139(3.55)
MIN
0.054(1.39)
0.045(1.15)
Pin 1
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.196(5.0)
0.163(4.16)
0.115(2.92)
0.080(2.03)
0.1(2.54)
Typ.
0.025(0.65)
MAX
Dimensions in inches and (millimeters)
◆ Flame Retardant Epoxy Molding Compound.
◆ Metal silicon junction, majority carrier conduction.
◆ Low power loss, High efficiency, High current capability.
◆ Guardring for overvoltage protection.
◆ Electrically Isolated. No Isolation Hardware Required.
◆ In compliance with EU Rohs 2002/95/EC directives.
◆ For use low voltage, high frequency inverters froo wheeling, and
polarlity protection application.
◆ Plastic package has Underwriters Laboratory Flammability
Classification 94V-0.
MECHANICAL DATA
Case: TO-220AB, Molded plastic package.
Terminals: Solderable per MIL-STD-750，Method 2026
Standard Packaging : Tube.
Polarity: As marked.
Mounting Position: Any.
Weight: 0.0655 ounces, 1.859 grams.
AC 1
AC 3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specif ied.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
Maximum repetitive peak reverse voltage
MBR30 MBR30 MBR30 MBR30 MBR30 MBR30 MBR30 MBR30 MBR30
SYMBOLS
UNITS
20CT 40CT 45CT 50CT 60CT 80CT 100CT 150CT 200CT
VRRM 20 40 45 50 60 80 100 150 200 Volts
Maximum RMS voltage
VRMS 14 28 31.5 35 42 56 70 105 140 Volts
Minimum DC Breakdown Voltage
VDC 20 40 45 50 60 80 100 150 200 Volts
Average Rectified current
IF(AV)
Non-repetitive Peak Forward Surge Current
at 8.3ms half sine-wave superimposed on rated load (JEDEC mathod)
IFSM
Maximum Forward Voltage
at IF=30A VF
Maximum DC Reverse Current at
Rated DC Blocking Voltage
TJ= 25°C IR
Typical Thermal Resistance
Rθ JC
0.70
30
275
0.75
0.05
1.5
0.80
Amp
Amps
0.9 Volts
mA
°C/W
Operating Junction and Storage Temperature Range
TJ, TSTG -50 ~ +150
-65 ～ +175
°C
Note: Both bonding and chip structure are available.
GOOD ELECTRONIC CO., LTD
