GS4288C09L Overview
GS4288C09/18/36L 144-Ball BGA mercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz 300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8.
GS4288C09L Key Features
- Pin- and function-patible with Micron RLDRAM® II
- 533 MHz DDR operation (1.067Gb/s/pin data rate)
- 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)
- 8 internal banks for concurrent operation and maximum
- Reduced cycle time (15 ns at 533 MHz)
- Address Multiplexing (Nonmultiplexed address option
- SRAM-type interface
- Programmable Read Latency (RL), row cycle time, and burst
- Balanced Read and Write Latencies in order to optimize data
- Data mask for Write mands