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GS81302T11GE Datasheet PDF

GSI Technology GS81302T11GE

The GS81302T06/11/20/38E are built in compliance with the SigmaDDR-II+ SRAM pinout standard for Common I/O synchronous SRAMs. They are 150,994,944-bit (144Mb) SRAMs. The GS81302T06/11/20/38E SigmaDDR-II+ SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.
Part No. GS81302T11GE
Datasheet GS81302T11GE Download
Manufacturer
GSI Technology
Description 144Mb SigmaDDR-II+ Burst of 2 SRAM
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GS81302T11GE datasheet page 1 preview

FEATURES

● 2.5 Clock Latency
● Simultaneous Read and Write SigmaDDRTM Interface
● JEDEC-standard pinout and package
● Double Data Rate interface
● Byte Write controls sampled at data-in time
● Burst of 2 Read and Write
● On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
● 1.8 V +100/–100 mV core power supply
● 1.5 V or 1.8 V HSTL Interface
● Pipelined read operation
● Fully coherent read and write pipelines
● ZQ pin for programmable output drive strength
● Data Valid Pin (QVLD) Support
● IEEE 1149.1 JTAG-compliant Boundary Scan
● 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
● RoHS-compliant 165-bump BGA package available SigmaDDR-II™ Family Overview They are 150,994,944-bit (144Mb) SRAMs. Clocking and Addressing Schemes The GS81302T06/11/20/38E SigmaDDR-II+ SRAMs are synchronous devices. They employ two input register clock inputs, K and K. K and K are independent single-ended clock inputs, not differential inputs to a single differential clock input buffer.
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