• Part: GS81302TT110E
  • Description: 144Mb SigmaDDR-II+ Burst of 2 SRAM
  • Manufacturer: GSI Technology
  • Size: 216.17 KB
GS81302TT110E Datasheet (PDF) Download
GSI Technology
GS81302TT110E

Description

Type Comments SA Synchronous Address Inputs Input - R/W Synchronous Read Input High: Read Low: Write BW0-BW3 Synchronous Byte Writes Input Active Low LD Synchronous Load Pin Input Active Low K Input Clock Input Active High K Input Clock Input Active Low TMS Test Mode Select Input - TDI Test Data Input Input - TCK Test Clock Input Input - TDO Test Data Output Output - VREF HSTL Input Reference Voltage Input - ZQ Output Impedance Matching Input Input - MCL Must Connect Low -- DQ Data I/O Input/Output Three State Doff Disable DLL when low Input Active Low CQ Output Echo Clock Output - CQ Output Echo Clock Output - VDD Power Supply Supply 1.8 V Nominal VDDQ Isolated Output Buffer Supply Supply 1.8 V or 1.5 V Nominal VSS Power Supply: Ground Supply - QVLD Q Valid Output Output - ODT On-Die Termination Input Low = Low Impedance Range High/Float = High Impedance Range NC No Connect -- Notes: 1. NC = Not Connected to die or any other pin 2.

Key Features

  • 2.0 Clock Latency
  • Simultaneous Read and Write SigmaDDRâ„¢ Interface
  • Common I/O bus
  • JEDEC-standard pinout and package
  • Double Data Rate interface
  • Byte Write controls sampled at data-in time
  • Burst of 2 Read and Write
  • Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
  • 1.8 V +100/-100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface