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GS8150V36AB-250, GS8150V18AB-357 Datasheet - GSI Technology

GS8150V36AB-250 1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM

250 MHz *357 MHz 1.8 V VDD 1.5 V or 1.8 V HSTL I/O Because GS8150V18/36A are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally selftimed and initiated by the rising edge of the clock input. .

GS8150V36AB-250 Features

* Register-Register Late Write mode, Pipelined Read mode

* 1.8 V +150/

* 100 mV core power supply

* 1.5 V or 1.8 V HSTL Interface

* ZQ controlled programmable output drivers

* Dual Cycle Deselect

* Fully coherent read and write pipelines

GS8150V18AB-357_GSITechnology.pdf

This datasheet PDF includes multiple part numbers: GS8150V36AB-250, GS8150V18AB-357. Please refer to the document for exact specifications by model.
GS8150V36AB-250 Datasheet Preview Page 2 GS8150V36AB-250 Datasheet Preview Page 3

Datasheet Details

Part number:

GS8150V36AB-250, GS8150V18AB-357

Manufacturer:

GSI Technology

File Size:

842.40 KB

Description:

1m x 18/ 512k x 36 18mb register-register late write sram.

Note:

This datasheet PDF includes multiple part numbers: GS8150V36AB-250, GS8150V18AB-357.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

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GS8150V36AB-357 1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM (GSI Technology)

GS8150V18AB-250 1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM (GSI Technology)

GS8150V18AB-300 1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM (GSI Technology)

GS8150V18AB-333 1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM (GSI Technology)

GS8150V18AB-357 1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM (GSI Technology)

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TAGS

GS8150V36AB-250 GS8150V18AB-357 512K 18Mb Register-Register Late Write SRAM GSI Technology

GS8150V36AB-250 Distributor