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GS832132E-V Datasheet PDF

GSI Technology GS832132E-V

The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.
Part No. GS832132E-V
Datasheet GS832132E-V Download
Manufacturer
GSI Technology
Description 36Mb Sync Burst SRAMs
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GS832132E-V datasheet page 1 preview

FEATURES

● IEEE 1149.1 JTAG-compatible Boundary Scan
● 1.8 V or 2.5 V core power supply
● 1.8 V or 2.5 V I/O supply
● LBO pin for Linear or Interleaved Burst mode
● Internal input resistors on mode pins allow floating mode pins
● Byte Write (BW) and/or Global Write (GW) operation
● Internal self-timed write cycle
● Automatic power-down for portable applications
● JEDEC-standard 165-bump FP-BGA package
● RoHS-compliant 165-bump BGA package available Functional

DESCRIPTION

APPLICATIONS

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. C
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