| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dim... |
| Features |
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings
Parameter Drain-So...
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| Datasheet |
 09N20 Datasheet - 231.88KB |
