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G111K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Features

  • Simple Drive Requirement.
  • Small Package Outline.
  • RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Op.

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Datasheet preview – G111K

Datasheet Details

Part number G111K
Manufacturer GTM
File Size 392.16 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G111K Datasheet
Additional preview pages of the G111K datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G 111 K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 55V 2 640mA The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G111K is universally used for all commercial-industrial applications. Description Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.
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