G2306 Description
Features Capable of 2.5V gate drive Lower on-resistance Reliable and Rugged Power Management in Notebook puter Portable Equipment Battery Powered System. Applications Package Dimensions REF. A B C D E F Millimeter Min.
G2306 is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
G2306A | N-Channel MOSFET |
Features Capable of 2.5V gate drive Lower on-resistance Reliable and Rugged Power Management in Notebook puter Portable Equipment Battery Powered System. Applications Package Dimensions REF. A B C D E F Millimeter Min.