G2306 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Key Features

Capable of 2.5V gate drive Lower on-resistance Reliable and Rugged Power Management in Notebook Computer Portable Equipment Battery Powered System.

G2306 n-channel enhancement mode power mosfet by GTM - Datasheet Preview

Datasheet Details

Part number	G2306
Manufacturer	GTM
File Size	408.89 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	G2306 Datasheet

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Other Datasheets by GTM

Part Number	Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Pb Free Plating Product CORPORATION G2306 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID 20V 32m 5.3A The G2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. Description Features Capable of 2.5V gate drive Lower on-resistance Reliable and Rugged Power Management in Notebook Computer Portable Equipment Battery Powered System. Applications Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.