Datasheet Details
| Part number | G2306A |
|---|---|
| Manufacturer | GTM |
| File Size | 351.69 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 G2306A Datasheet
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General Description
The G2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The G2306A is universally used for all commercial-industrial applications.
Capable of 2.5V gate drive Lower on-resistanceKey Features
- Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V 3 Continuous Drain Current , VGS@4.5V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @Ta=25.