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G2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR

Key Features

  • P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09.

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Datasheet Details

Part number G2N5401
Manufacturer GTM
File Size 173.58 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet G2N5401 Datasheet

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www.DataSheet4U.com CORPORATION G2N5401 Description Features P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5401 is designed for general purpose applications requiring high breakdown voltages. *Complementary to NPN Type G2N5551 *High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA)) Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.