G2N5401 datasheet, transistor equivalent, GTM

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Features and benefits

P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5401 is designed for general purpose applications requiring high breakdown.

Application

requiring high breakdown voltages. *Complementary to NPN Type G2N5551 *High Collector-Emitter Breakdown Voltage (VCEO=15.

Description

Features P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5401 is designed for general purpose applications requiring high breakdown voltages. *Complementary to NPN Type G2N5551 *High Collector-Emitter B.

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