G2N5401 Description
Features P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5401 is designed for general purpose applications requiring high breakdown voltages. plementary to NPN Type G2N5551 High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA)) Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min.
G2N5401 Applications
- plementary to NPN Type G2N5551 -High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA))