N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device id.

or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or applic.

Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device ideal for portable equipment. Easily designed drive circuits. Easy to par.

G3018K

G301K

G30

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G3000TF450

G300N04

G300N04D3

G300N04L

G300P06

G300P06T

G3035

G3035L

G30FG