datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





GTM
GTM

G3314 Datasheet Preview

G3314 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

G3314 pdf
www.DataSheet4U.com
Pb Free Plating Product
CORPORATION ISSUED DATE :2005/03/04
REVISED DATE :
G3314
BVDSS
-30V
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
RDS(ON)
ID
240m
-1.9A
Description
The G3314 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Low On-resistance
*Ultrahigh-speed switching
*4V drive
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-30
20
-1.9
-1.5
-10
1.38
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Ratings
90
Unit
/W
1/4



GTM
GTM

G3314 Datasheet Preview

G3314 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

G3314 pdf
CORPORATION ISSUED DATE :2005/03/04
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
-0.1
-
V/ Reference to 25 , ID=-1mA
Gate Threshold Voltage
VGS(th) -1.0
-
-
V VDS=VGS, ID=-250uA
Forward Transconductance
gfs - 2 - S VDS=-10V, ID=-1.7A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -10 uA VDS=-30V, VGS=0
- - 240
VGS=-10V, ID=-1.7A
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 270 m VGS=-10V, ID=-0.8A
- 460
VGS=-4.5V, ID=-1.3A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
- - 500
VGS=-4V, ID=-0.4A
- 6.2 -
ID=-1.7A
- 1.4 - nC VDS=-15V
- 0.3 -
VGS=-10V
- 7.6 -
- 8.2 -
- 17.5 -
-9-
VDS=-15V
ID=-1A
ns VGS=-10V
RG=6
RD=15
- 230 -
- 130.4 -
- 40 -
VGS=0V
pF VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
-1
-6.4
Unit Test Conditions
V IS=-1.25A, VGS=0V
A VD= VG=0V, VS=-1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270 /W when mounted on min. copper pad.
2/4


Part Number G3314
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
Total Page 4 Pages
PDF Download
G3314 pdf
G3314 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 G3314 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM
GTM
G3314 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy