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G3J14 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The G3J14 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

The G3J14 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Low On-resistance

Key Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25.

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Datasheet Details

Part number G3J14
Manufacturer GTM
File Size 403.66 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G3J14 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/04 REVISED DATE : G3J14 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 85m -3.7A Description The G3J14 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G3J14 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Low On-resistance *High-speed switching *Simple Drive Requirement Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.