NPN EPITAXIAL PLANAR TRANSISTOR The GESD880 is designed for audio frequency power amplifier application. High DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A Lo.

or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or applic.

Features NPN EPITAXIAL PLANAR TRANSISTOR The GESD880 is designed for audio frequency power amplifier application. High DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A Pac.

GESD1060

GESD5B5CU

GESD5V0B5

GESD5V0D1

GESD5V0D5

GESDBK5V0Y1

GES060

GES061

GES062

GES2218

GES2218A

GES2219

GES2219A