n-channel enhancement mode power mosfet.
Package Dimensions TO-251
REF.
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A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Mil.
and suited for AC/DC converters. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switc.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 8 1.6A
The GI01N60 provide the designer with the best combination of fast switching. The through-hole version (TO-251) is available for low-profile applications and suited for AC/DC co.
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