GI01N60 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: GTM

Overview: Pb Free Plating Product ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B.

Datasheet Details

Part number	GI01N60
Manufacturer	GTM
File Size	317.70 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI01N60_GTM.pdf

General Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 1.6A The GI01N60 provide the designer with the best combination of fast switching.

The through-hole version (TO-251) is available for low-profile applications and suited for AC/DC converters.

*Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching

Key Features

Package Dimensions TO-251 REF. www. DataSheet4U. com A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1, Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600 20 1.6 1 6 39 0.

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