GI9916 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GI9916 N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GI9916

Datasheet Details

Part number	GI9916
Manufacturer	GTM
File Size	297.62 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI9916 Datasheet
Additional preview pages of the GI9916 datasheet.

Product details

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25m 35A The GI9916 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Single Drive Requirement Low on-resistance Capable of 2.5V gate drive Low drive current

Features

Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=125 IDM PD @TC=25 Tj, Tstg Ratings 18 ±12 35 16 90 50 0.4 -55 ~ +150.

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Other Datasheets by GTM

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Published: Sep 4, 2007 |