GJ1060 - NPN EPITAXIAL PLANAR TRANSISTOR

Product Overview

GTM

Part number	GJ1060
Manufacturer	GTM
File Size	423.11 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	GJ1060 Datasheet
Additional preview pages of the GJ1060 datasheet.

The GJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching.

Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max. ) @ IC=3A, IB=0.3A, Package Dimensions TO-252 Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Collector Current (Pulse) ICP Total Device Dissipation (TC=25к) PD Junction Temperature TJ Storage Temperature Tstg REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.

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Published: Sep 4, 2007 |