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GLBCP56 - NPN EPITAXIAL SILICON TRANSISTOR

Features

  • N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GLBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V Complementary to GLBCX53 Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Te.

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Datasheet Details

Part number GLBCP56
Manufacturer GTM
File Size 205.63 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet GLBCP56 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D GLBCP56 Description Features N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GLBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V Complementary to GLBCX53 Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings http://www.DataSheet4U.
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