• Part: GLBCP56
  • Description: NPN EPITAXIAL SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: GTM
  • Size: 205.63 KB
Download GLBCP56 Datasheet PDF
GTM
GLBCP56
Description Features N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GLBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V plementary to GLBCX53 Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings http://..net/ Unit Tj Ts TG VCBO VCEO VEBO IC PD ) +150 -65 ~ +150 100 80 5 1 1.5 V V V A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat)1 - VBE(on) - h FE1 - h FE2 - h FE3 f T Min. 100 80 5 63 63 40 100 Typ. Max. 100 100 500 1000 250 - Unit V V V n A n A m V m V IC=100u A, IE=0...