• Part: GLBCP69
  • Description: PNP SILICON EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: GTM
  • Size: 300.19 KB
Download GLBCP69 Datasheet PDF
GTM
GLBCP69
Description Features P NP S ILI CO N EP ITAX I AL T RANS ISTO R The GLBCP69 is designed for use in low voltage and medium power applications. VCEO : -20V IC :1A ISSUED DATE :2005/07/15 REVISED DATE : Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD http://..net/ Ratings +150 -65~+150 -25 -20 -5 -1 1.5 Unit V V V A W Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat)1 - VBE(on) - h FE1 - h FE2 - h FE3 f T Min. -25 -20 -5 50 85 60 Typ. 60 ,unless otherwise noted) Max. Unit Test Conditions V IC=-100u A , IE=0 V IC=-1m A, IB=0 V IE=-10u A ,IC=0...