GP4435 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Key Features

Package Dimensions D GAUGE PLANE E REF. A A1 A2 b b1 b2 b3 c A Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810.

GP4435 p-channel enhancement mode power mosfet by GTM - Datasheet Preview

Datasheet Details

Part number	GP4435
Manufacturer	GTM
File Size	317.40 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GP4435 Datasheet

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Full PDF Text Transcription (Reference)

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Pb Free Plating Product ISSUED DATE :2005/03/02 REVISED DATE : GP4435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 20m -9A The GP4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Simple Drive Requirement *Lower On-resistance *Fast Switching Description Features Package Dimensions D GAUGE PLANE E REF. A A1 A2 b b1 b2 b3 c A Millimeter Min. Max. 0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356 REF. c1 D E E1 e HE L Millimeter Min. Max. 0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810 SEATING PLANE Z Z b L SECTION Z - Z b e DIP-8 c http://www.DataSheet4U.