GTS9926 mosfet equivalent, n-channel enhancement mode power mosfet.
*Low on-resistance *Capable of 2.5V gate drive *Low drive current
Package Dimensions
REF.
A A1 b c D
Millimeter
Min. Max.
-
1.20
0.05
0.15
0.19
0.30
0.09
0.20.
or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or applic.
The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance *Capable of 2.5V gate drive *Low drive current
Package Dimensions
.
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